The 795 nm SAF Series of high-performance edge-emitting gain chips are based on Photodigm’s advanced monolithic Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam, a unique anti-reflective and highly reflective coating pair (>90% HR, <0.1% AR), and has passivated facets for reliability. The 950 nm Series SAF gain chip devices have a curved waveguide forming a 5¨? angle exit at the facet and are frequently used in applications involving external-cavity diode lasers (ECDLs).
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