wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $2,750
Power:
40 mW
- 120 mW
Mounting:
Standard
Packaging:
C-Mount $100
PRODUCT DESCRIPTION
The 894.592 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 894.592 nm Series DBR devices are used in atomic spectroscopy for cesium-based (Cs) applications. The 894.592 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Cs D1 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 40-120 mW
Package Add-on description:
C-Mount features our chip on submount (CoS) directly attached to a copper-tungsten (CuW) heatsink for easy integration into macro-packaging efforts. Perfect for OEM integration where ambient environments are acceptable.
PRICE: $2,850.00
894.592 nm single-frequency DBR Low Power Chip Architecture ($2750) with output power of 40-120 mW, in a C-Mount Package ( $100), for a total unit cost of $2850
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
1 Week