wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $3,750
Power:
80 mW
- 240 mW
Mounting:
Standard
Packaging:
C-Mount $100
PRODUCT DESCRIPTION
The 854.209 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 854.209 nm Series DBR devices are used in atomic spectroscopy for calcium ion-based (Ca ) applications. The 854.209 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Ca cooling transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 8040 mW
Package Add-on description:
C-Mount features our chip on submount (CoS) directly attached to a copper-tungsten (CuW) heatsink for easy integration into macro-packaging efforts. Perfect for OEM integration where ambient environments are acceptable.
PRICE: $3,850.00
854.209 nm single-frequency DBR High Power Chip Architecture ($3750) with output power of 8040 mW, in a C-Mount Package ( $100), for a total unit cost of $3850
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
Contact Sales For Lead Time
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