wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $1,999
Power:
40 mW
- 80 mW
Mounting:
Standard
Packaging:
Transmitter Optical Subassembly (TOSA) $500
PRODUCT DESCRIPTION
The 852.347 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 852.347 nm Series DBR devices are used in atomic spectroscopy for cesium-based (Cs) and Raman spectroscopy applications. The 852.347 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Cs D2 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 40-80 mW
Package Add-on description:
The Transmitter Optical Subassembly (TOSA) package comes with a thermoelectric cooler (TEC) and thermistor in a small package with a flexible ribbon cable to ready out the on-chip information. TOSAs come hermetically sealed and are great for all applications.
PRICE: $2,499.00
852.347 nm single-frequency DBR Low Power Chip Architecture ($1999) with output power of 40-80 mW, in a TOSA Package ( $500), for a total unit cost of $3250
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
4 Weeks
NEED A HEAT SINK MOUNT?
Photodigm’s TS Mount provides easy connections between our TOSA packaged DBR, an external laser diode controller, and an external thermoelectric cooler controller.
TS-2000-A | $525
How can we help you?
Not sure which architecture is right for your system?