wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $3,750
Power:
80 mW
- 180 mW
Mounting:
MHF VPS $1,400
Packaging:
C-Mount $100
PRODUCT DESCRIPTION
The 800 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 800 nm Series DBR devices are used in as low-noise pump sources for biomedical diagnostics and imaging applications.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 80-180 mW
Package Add-on description:
C-Mount features our chip on submount (CoS) directly attached to a copper-tungsten (CuW) heatsink for easy integration into macro-packaging efforts. Perfect for OEM integration where ambient environments are acceptable. The combination of Mode-Hop Free (MHF) and Virtual Point Source (VPS) Lens provides a dynamic combination of consistent tunability across the power and wavelength range in a easy to direct couple package.
PRICE: $5,250.00
800 nm single-frequency DBR High Power Chip Architecture ($3750) with output power of 80-180 mW, Mode Hop Free Mounting ( $700), Virtual Point Source (VPS) Lens ( $700), in a C-Mount Package ( $100), for a total unit cost of $5250
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
Contact Sales For Lead Time