wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $1,999
Power:
40 mW
- 80 mW
Mounting:
Virtual Point Source Lens (VPS) $700
Packaging:
C-Mount $100
PRODUCT DESCRIPTION
The 785 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 785 nm Series DBR devices are used in Raman spectroscopy and materials characterization applications.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 40-80 mW
Package Add-on description:
C-Mount features our chip on submount (CoS) directly attached to a copper-tungsten (CuW) heatsink for easy integration into macro-packaging efforts. Perfect for OEM integration where ambient environments are acceptable. The Virtual Point Source (VPS) Lens add-on enables direct coupling of the light into additional optics, fiber optics, detectors, and more.
PRICE: $2,799.00
785 nm single-frequency DBR Low Power Chip Architecture ($1999) with output power of 40-80 mW, Virtual Point Source (VPS) Lens ( $700), in a C-Mount Package ( $100), for a total unit cost of $3550
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
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