wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $1,999
Power:
30 mW
- 60 mW
Mounting:
Standard
Packaging:
IsoBragg Package $1500
PRODUCT DESCRIPTION
The 785 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 785 nm Series DBR devices are used in Raman spectroscopy and materials characterization applications.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 30-60 mW
Package Add-on description:
The IsoBraggÇ—¢ is the new line of high-powered fiber-coupled optically isolated laser diode packages with superior power performance in a portable size (58.0 x 40.0 x 29.0 mm). The IsoBraggÇ—¢ leverages the accuracy and precision of an edge-emitting Photodigm Distributed Bragg Reflector (DBR) laser diode, designed from its proprietary monolithic single-frequency Gallium Arsenide (GaAs) advanced laser technology. The package provides a single spatial mode beam coupled into a 1-meter-length polarization maintaining (PM) fiber affixed with an FC/APC male output connector.
PRICE: $2,748.00
785 nm single-frequency DBR Low Power Chip Architecture ($1999) with output power of 30-60 mW, in an IsoBragg Package ( $1500), for a total unit cost of $4250
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
2 weeks