wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $2,999
Power:
30 mW
- 110 mW
Mounting:
Standard
Packaging:
IsoBragg Package $1500
PRODUCT DESCRIPTION
The 785 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 785 nm Series DBR devices are used in Raman spectroscopy and materials characterization applications.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 30-110 mW.
Package Add-on description:
The IsoBragg™ is the new line of high-powered fiber-coupled optically isolated laser diode packages with superior power performance in a portable size (58.0 x 40.0 x 29.0 mm). The IsoBragg™ leverages the accuracy and precision of an edge-emitting Photodigm Distributed Bragg Reflector (DBR) laser diode, designed from its proprietary monolithic single-frequency Gallium Arsenide (GaAs) advanced laser technology. The package provides a single spatial mode beam coupled into a 1-meter-length polarization maintaining (PM) fiber affixed with an FC/APC male output connector.
PRICE: $4,499.00
785 nm single-frequency DBR High Power Chip Architecture ($2999) with output power of 30-110 mW, in an IsoBragg Package ( $1500), for a total unit cost of $4499.
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
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