wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Operating Temperature $4,250
Power:
10 mW
- 30 mW
Mounting:
Standard
Packaging:
TO-8 $500
PRODUCT DESCRIPTION
The 780.241 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 780.241 nm Series DBR devices are used in atomic spectroscopy for rubidium-based (Rb) applications. The 780.241 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Rb D2 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the HOT laser diode architecture, a product specifically optimized for high operating temperature in applications where cooling the laser diode might be cumbersome. Power output is between 10-30 mW
Package Add-on description:
The TO-8 package include every optional package add on, thermoelectric cooler (TEC), photodiode, and thermistor in one convienent package with optional hermetic sealing. This is one of the best packages for OEM integration where protection from ambient is important and on-chip information is critical.
PRICE: $4,750.00
780.241 nm single-frequency DBR High Operating Temperature (HOT) Chip Architecture ($4250) with output power of 10-30 mW, in a TO-8 Package ( $500), for a total unit cost of $4750
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
2 weeks
NEED A HEAT SINK MOUNT?
Photodigm’s T8 Mount provides easy connections between our TO-8 packaged DBR, an external laser diode controller, and an external thermoelectric cooler controller.