wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Operating Temperature $4,250
Power:
10 mW
- 30 mW
Mounting:
Standard
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 780.241 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 780.241 nm Series DBR devices are used in atomic spectroscopy for rubidium-based (Rb) applications. The 780.241 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Rb D2 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the HOT laser diode architecture, a product specifically optimized for high operating temperature in applications where cooling the laser diode might be cumbersome. Power output is between 10-30 mW
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 2.8x3.8x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering.
PRICE: $4,250.00
780.241 nm single-frequency DBR High Operating Temperature (HOT) Chip Architecture ($4250) with output power of 10-30 mW, chip on submount, for a total unit cost of $4250
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
1 Week