wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $2,999
Power:
20 mW
- 40 mW
Mounting:
Standard
Packaging:
Butterfly Isolator $3,000
PRODUCT DESCRIPTION
The 780.241 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 780.241 nm Series DBR devices are used in atomic spectroscopy for rubidium-based (Rb) applications. The 780.241 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Rb D2 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 20-40 mW
Package Add-on description:
The Butterfly Isolator package is the ideal package for the customer that needs fiber-coupling with excellent isolation for precision spectroscopy work. It is ideal for situations where free-space transmission isn't possible. Note: Butterfly packages result in lower total output power due to fiber coupling efficiency losses and isolator absorption losses.
PRICE: $5,999.00
780.241 nm single-frequency DBR High Power Chip Architecture ($2,999) with output power of 20-40 mW, in a Butterfly-ISO Package ( $3000), for a total unit cost of $6750
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
12 Weeks