wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power RFQ
Power:
40 mW
- 120 mW
Mounting:
Standard
Packaging:
Transmitter Optical Subassembly (TOSA) $500
PRODUCT DESCRIPTION
The 776.061 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 776.061 nm Series DBR devices are used in atomic spectroscopy for rubidium-based (Rb) applications. The 778.105 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Rb two-photon transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 40-120 mW
Package Add-on description:
The Transmitter Optical Subassembly (TOSA) package comes with a thermoelectric cooler (TEC) and thermistor in a small package with a flexible ribbon cable to ready out the on-chip information. TOSAs come hermetically sealed and are great for all applications.
Ask Price
776.061 nm single-frequency DBR High Power Chip Architecture (RFQ) with output power of 40-120 mW, in a TOSA Package ( $500). Base chip architecture price and total unit cost are available upon request.
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
Contact Sales For Lead Time
NEED A HEAT SINK MOUNT?
Photodigm’s TS Mount provides easy connections between our TOSA packaged DBR, an external laser diode controller, and an external thermoelectric cooler controller.