wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $3,750
Power:
35 mW
- 100 mW
Mounting:
Standard
Packaging:
IsoBragg Package $1500
PRODUCT DESCRIPTION
The 776.061 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 776.061 nm Series DBR devices are used in atomic spectroscopy for rubidium-based (Rb) applications. The 778.105 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Rb two-photon transition ¨± 10 ¨?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 35-100 mW
Package Add-on description:
The IsoBraggÇ—¢ is the new line of high-powered fiber-coupled optically isolated laser diode packages with superior power performance in a portable size (58.0 x 40.0 x 29.0 mm). The IsoBraggÇ—¢ leverages the accuracy and precision of an edge-emitting Photodigm Distributed Bragg Reflector (DBR) laser diode, designed from its proprietary monolithic single-frequency Gallium Arsenide (GaAs) advanced laser technology. The package provides a single spatial mode beam coupled into a 1-meter-length polarization maintaining (PM) fiber affixed with an FC/APC male output connector.
PRICE: $4,499.00
776.061 nm single-frequency DBR High Power Chip Architecture ($3750) with output power of 35-100 mW, in an IsoBragg Package ( $1500), for a total unit cost of $5250
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
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