wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $3,750
Power:
10 mW
- 20 mW
Mounting:
Mode Hop Free (MHF) $700
Packaging:
Butterfly Isolator $3,000
PRODUCT DESCRIPTION
The 770.108 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 770.108 nm Series DBR devices are used in atomic spectroscopy for potassium-based (K) applications. The 770.108 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the K D1 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 100 mW
Package Add-on description:
The Butterfly Isolator package is the ideal package for the customer that needs fiber-coupling with excellent isolation for precision spectroscopy work. It is ideal for situations where free-space transmission isn't possible. Note: Butterfly packages result in lower total output power due to fiber coupling efficiency losses and isolator absorption losses. The Mode-Hop Free (MHF) add-on is ideal for applications where tunability is critical, removing the mode-hops for consistent power and wavelength tuning by controlling current.
PRICE: $7,450.00
780.241 nm single-frequency DBR High Power Chip Architecture ($3750) with output power of 30-150 mW, in an IsoBragg Package ( $1500), for a total unit cost of $5250
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
12 Weeks