wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $3,750
Power:
40 mW
- 80 mW
Mounting:
Standard
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 766.700 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 766.700 nm Series DBR devices are used in atomic spectroscopy for potassium-based (K) applications. The 766.700 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the K D2 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 40-80 mW
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 2.8x3.8x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering.
PRICE: $2,999.00
766.700 nm single-frequency DBR High Power Chip Architecture ($3750) with output power of 40-80 mW, chip on submount, for a total unit cost of $3750
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
1 Week