wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $1,999
Power:
10 mW
- 45 mW
Mounting:
Mode Hop Free (MHF) $700
Packaging:
Butterfly Isolator $3,000
PRODUCT DESCRIPTION
The 1083.33 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1083.33 nm Series DBR devices are used in atomic spectroscopy for metastable Helium-based (He*) applications. The 1083.33 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the He*transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 10-45 mW
Package Add-on description:
The Butterfly Isolator package is the ideal package for the customer that needs fiber-coupling with excellent isolation for precision spectroscopy work. It is ideal for situations where free-space transmission isn't possible. Note: Butterfly packages result in lower total output power due to fiber coupling efficiency losses and isolator absorption losses. The Mode-Hop Free (MHF) add-on is ideal for applications where tunability is critical, removing the mode-hops for consistent power and wavelength tuning by controlling current.
PRICE: $5,699.00
1083.33 nm single-frequency DBR Low Power Chip Architecture ($1999) with output power of 10-45 mW, Mode Hop Free Mounting ( $700), in a Butterfly-ISO Package ( $3000), for a total unit cost of $6450
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
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