wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $2,999
Power:
50 mW
- 140 mW
Mounting:
Mode Hop Free (MHF) $700
Packaging:
Butterfly $2,500
PRODUCT DESCRIPTION
The 1083.33 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1083.33 nm Series DBR devices are used in atomic spectroscopy for metastable Helium-based (He*) applications. The 1083.33 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the He*transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 50-140 mW
Package Add-on description:
The Butterfly package is the ideal package for the customer that needs fiber-coupling. It is ideal for situations where free-space transmission isn't possible. Note: Butterfly packages result in lower total output power due to fiber coupling efficiency losses. The Mode-Hop Free (MHF) add-on is ideal for applications where tunability is critical, removing the mode-hops for consistent power and wavelength tuning by controlling current.
PRICE: $6,199.00
1083.33 nm single-frequency DBR High Power Chip Architecture ($2999) with output power of 50-140 mW, Mode Hop Free Mounting ( $700), in a Butterfly Package ( $2500), for a total unit cost of $6950
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
8 Weeks