wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $1,999
Power:
20 mW
- 100 mW
Mounting:
Standard
Packaging:
IsoBragg Package $2400
PRODUCT DESCRIPTION
The 1064 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1064 nm Series DBR devices are used in frequency doubling applications as a low-noise optical pump source.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 20-100 mW
Package Add-on description:
The IsoBraggÇ—¢ is the new line of high-powered fiber-coupled, ultra-high optically isolated laser diode packages with superior power performance in a portable size (84.4 x 40.0 x 29.4 mm) with >60 dB optical isolation. The IsoBraggÇ—¢ leverages the accuracy and precision of an edge-emitting Photodigm Distributed Bragg Reflector (DBR) laser diode, designed from its proprietary monolithic single-frequency Gallium Arsenide (GaAs) advanced laser technology. The package provides a single spatial mode beam coupled into a 1-meter-length polarization maintaining (PM) fiber affixed with an FC/APC male output connector.
PRICE: $4,199.00
1064 nm single-frequency DBR Low Power Chip Architecture ($1999) with output power of 20-100 mW, in an IsoBragg Package ( $2400), for a total unit cost of $4950
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
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