wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $2,750
Power:
40 mW
- 180 mW
Mounting:
Mode Hop Free (MHF) $700
Packaging:
C-Mount $100
PRODUCT DESCRIPTION
The 1039 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1039 nm Series DBR devices are used in as a low noise nitrogen-vacancy (NV) center probe when frequency doubled.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 40-180 mW
Package Add-on description:
C-Mount features our chip on submount (CoS) directly attached to a copper-tungsten (CuW) heatsink for easy integration into macro-packaging efforts. Perfect for OEM integration where ambient environments are acceptable. The Mode-Hop Free (MHF) add-on is ideal for applications where tunability is critical, removing the mode-hops for consistent power and wavelength tuning by controlling current.
PRICE: $3,550.00
1039 nm single-frequency DBR Low Power Chip Architecture ($2750) with output power of 40-180 mW, Mode Hop Free Mounting ( $700), in a C-Mount Package ( $100), for a total unit cost of $3550
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
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