wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $2,999
Power:
100 mW
- 350 mW
Mounting:
Direct-Edge Coupling (DEC) $100
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 1083.33 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1083.33 nm Series DBR devices are used in atomic spectroscopy for metastable Helium-based (He*) applications. The 1083.33 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the He*transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 100-350 mW
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 3.8x2.8x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering.nThis product also features Direct Edge-Coupling (DEC), where the gain chip overhangs slightly by 20 microns for easy butt-coupling to Photonic Integrated Circuits (PICs). DEC has the precision of ¨± 3 microns positional placement with ¨± 1¨? rotational placement.
PRICE: $3,099.00
1083.33 nm single-frequency DBR High Power Chip Architecture ($2999) with output power of 100-350 mW, Direct-Edge Coupling (DEC) ( $100), chip on submount, for a total unit cost of $3850
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
1 Week