wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $2,999
Power:
100 mW
- 350 mW
Mounting:
Standard
Packaging:
TO-8 $500
PRODUCT DESCRIPTION
The 1083.33 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1083.33 nm Series DBR devices are used in atomic spectroscopy for metastable Helium-based (He*) applications. The 1083.33 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the He*transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 100-350 mW
Package Add-on description:
The TO-8 package include every optional package add on, thermoelectric cooler (TEC), photodiode, and thermistor in one convienent package with optional hermetic sealing. This is one of the best packages for OEM integration where protection from ambient is important and on-chip information is critical.
PRICE: $3,499.00
1083.33 nm single-frequency DBR High Power Chip Architecture ($2999) with output power of 100-350 mW, in a TO-8 Package ( $500), for a total unit cost of $4250
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
2 weeks
NEED A HEAT SINK MOUNT?
Photodigm’s T8 Mount provides easy connections between our TO-8 packaged DBR, an external laser diode controller, and an external thermoelectric cooler controller.