wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $1,999
Power:
40 mW
- 120 mW
Mounting:
Direct-Edge Coupling (DEC) $100
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 1083.33 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1083.33 nm Series DBR devices are used in atomic spectroscopy for metastable Helium-based (He*) applications. The 1083.33 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the He*transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 40-120 mW
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 3.8x2.8x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering.nThis product also features Direct Edge-Coupling (DEC), where the gain chip overhangs slightly by 20 microns for easy butt-coupling to Photonic Integrated Circuits (PICs). DEC has the precision of ¨± 3 microns positional placement with ¨± 1¨? rotational placement.
PRICE: $2,099.00
1083.33 nm single-frequency DBR Low Power Chip Architecture ($1999) with output power of 40-120 mW, Direct-Edge Coupling (DEC) ( $100), chip on submount, for a total unit cost of $2850
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
Contact Sales For Lead Time