wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $3,750
Power:
80 mW
- 240 mW
Mounting:
Standard
Packaging:
TO-8 $500
PRODUCT DESCRIPTION
The 894.592 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 894.592 nm Series DBR devices are used in atomic spectroscopy for cesium-based (Cs) applications. The 894.592 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Cs D1 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 8040 mW
Package Add-on description:
The TO-8 package include every optional package add on, thermoelectric cooler (TEC), photodiode, and thermistor in one convienent package with optional hermetic sealing. This is one of the best packages for OEM integration where protection from ambient is important and on-chip information is critical.
PRICE: $4,250.00
894.592 nm single-frequency DBR High Power Chip Architecture ($3750) with output power of 8040 mW, in a TO-8 Package ( $500), for a total unit cost of $4250
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
2 weeks
NEED A HEAT SINK MOUNT?
Photodigm’s T8 Mount provides easy connections between our TO-8 packaged DBR, an external laser diode controller, and an external thermoelectric cooler controller.