wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Operating Temperature $4,250
Power:
5 mW
- 15 mW
Mounting:
Standard
Packaging:
Butterfly $2,500
PRODUCT DESCRIPTION
The 852.347 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 852.347 nm Series DBR devices are used in atomic spectroscopy for cesium-based (Cs) and Raman spectroscopy applications. The 852.347 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Cs D2 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the HOT laser diode architecture, a product specifically optimized for high operating temperature in applications where cooling the laser diode might be cumbersome. Power output is between 5-15 mW
Package Add-on description:
The Butterfly package is the ideal package for the customer that needs fiber-coupling. It is ideal for situations where free-space transmission isn't possible. Note: Butterfly packages result in lower total output power due to fiber coupling efficiency losses.
PRICE: $6,750.00
852.347 nm single-frequency DBR High Operating Temperature (HOT) Chip Architecture ($4250) with output power of 5-15 mW, in a Butterfly Package ( $2500), for a total unit cost of $6750
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
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