wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Operating Temperature $4,250
Power:
10 mW
- 30 mW
Mounting:
Virtual Point Source Lens (VPS) $700
Packaging:
C-Mount $100
PRODUCT DESCRIPTION
The 852.347 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 852.347 nm Series DBR devices are used in atomic spectroscopy for cesium-based (Cs) and Raman spectroscopy applications. The 852.347 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Cs D2 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the HOT laser diode architecture, a product specifically optimized for high operating temperature in applications where cooling the laser diode might be cumbersome. Power output is between 10-30 mW
Package Add-on description:
C-Mount features our chip on submount (CoS) directly attached to a copper-tungsten (CuW) heatsink for easy integration into macro-packaging efforts. Perfect for OEM integration where ambient environments are acceptable. The Virtual Point Source (VPS) Lens add-on enables direct coupling of the light into additional optics, fiber optics, detectors, and more.
PRICE: $5,050.00
852.347 nm single-frequency DBR High Operating Temperature (HOT) Chip Architecture ($4250) with output power of 10-30 mW, Virtual Point Source (VPS) Lens ( $700), in a C-Mount Package ( $100), for a total unit cost of $5050
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
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