wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $1,999
Power:
40 mW
- 80 mW
Mounting:
Standard
Packaging:
9MM $150
PRODUCT DESCRIPTION
The 852.347 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 852.347 nm Series DBR devices are used in atomic spectroscopy for cesium-based (Cs) and Raman spectroscopy applications. The 852.347 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Cs D2 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 40-80 mW
Package Add-on description:
9MM is the ideal package for simple integration of a low-power part that is also hermetically sealed; shielding it from ambient conditions. Features 3 terminals with an optional photodiode.
PRICE: $1,999.00
852.347 nm single-frequency DBR Low Power Chip Architecture ($1999) with output power of 40-80 mW, in a 9mm Package ( $150), for a total unit cost of $2900
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
4 Weeks