wavelength:
Type:
Gain Chip Laser Diode
Chip Architecture:
Double-Angle Facet $800
Power:
10 mW
- 100 mW
Mounting:
Standard
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 850 nm DAF Series of high-performance edge-emitting gain chip are based on Photodigm’s advanced monolithic Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam, a unique anti-reflective coating pair (<3% AR both sides) and has passivated facets for reliability. The 850 nm Series DAF gain chip devices have an angled waveguide at the output facet to minimize internal reflections and are frequently used in applications to recover isolator and fiber insertion losses.
Chip Architecture Description
This gain chip is based on Photodigm's proprietary single-mode ridgewaveguide design. It is augmented by the Double-Angle Facet architecture, a product designed with a diagonal waveguide to amplify laser light in a single-pass process. Amplification is between 10 - 100 mW
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 2.0x1.5x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering.
PRICE: $800.00
850 nm double-angle facet (DAF) gain chip ($800) with an amplification of 10-100 mW , in a Chip-on Submount (CoS) Package, for a total unit cost of $800
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
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