wavelength:
Type:
Gain Chip Laser Diode
Chip Architecture:
Single-Angle Facet Direct Emission $800
Power:
10 mW
- 100 mW
Mounting:
Standard
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 850 nm SAF Series of high-performance edge-emitting gain chips are based on Photodigm’s advanced monolithic Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam, a unique anti-reflective and highly reflective coating pair (>90% HR, <0.1% AR), and has passivated facets for reliability. The 850 nm Series SAF gain chip devices have a curved waveguide forming a 5° angle exit at the facet and are frequently used in applications involving external-cavity diode lasers (ECDLs).
Chip Architecture Description
This gain chip is based on Photodigm's proprietary single-mode ridgewaveguide design. It is augmented by the Single-Angle Facet architecture, a product designed with a 5* curved waveguide to feedback amplified laser light in a dual-pass process. Amplification is between 10 - 100 mW.
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 2.0x1.5x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering. This package holds the gain chip in a Direct-Emission (DE) orientation; where the gain chip is angled relative to the submount front facet to feedback light perpendicular to the submount front facet.
PRICE: $49.00
850 nm single-angle facet (SAF) gain chip ($800) with an amplification of 10-100 mW , in a Chip-on Submount (CoS) Package designed for Direct Emission (DE), for a total unit cost of $800.
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
Contact Sales For Lead Time