wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $3,750
Power:
80 mW
- 180 mW
Mounting:
Direct-Edge Coupling (DEC) $100
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 828 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 828 nm Series DBR devices are used in Light detection and ranging (LIDAR) and water vapor sensing.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 80-180 mW
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 3.8x2.8x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering.nThis product also features Direct Edge-Coupling (DEC), where the gain chip overhangs slightly by 20 microns for easy butt-coupling to Photonic Integrated Circuits (PICs). DEC has the precision of ¨± 3 microns positional placement with ¨± 1¨? rotational placement.
PRICE: $3,850.00
828 nm single-frequency DBR High Power Chip Architecture ($3750) with output power of 80-180 mW, Direct-Edge Coupling (DEC) ( $100), chip on submount, for a total unit cost of $3850
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
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