wavelength:
Type:
DBR Laser Diode
Chip Architecture:
Low Power $1,999
Power:
40 mW
- 80 mW
Mounting:
Direct-Edge Coupling (DEC) $100
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 794.978 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 794.978 nm Series DBR devices are used in atomic spectroscopy for rubidium-based (Rb) and optically pumped magnetometry applications. The 780.241 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Rb D1 transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 40-80 mW
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 3.8x2.8x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering.nThis product also features Direct Edge-Coupling (DEC), where the gain chip overhangs slightly by 20 microns for easy butt-coupling to Photonic Integrated Circuits (PICs). DEC has the precision of ¨± 3 microns positional placement with ¨± 1¨? rotational placement.
PRICE: $2,099.00
794.978 nm single-frequency DBR Low Power Chip Architecture ($1999) with output power of 40-80 mW, in a a Direct-Edge Coupling (DEC) configruation ( $100), for a total unit cost of $2850
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
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