wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power RFQ
Power:
40 mW
- 120 mW
Mounting:
Standard
Packaging:
C-Mount $100
PRODUCT DESCRIPTION
The 776.061 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 776.061 nm Series DBR devices are used in atomic spectroscopy for rubidium-based (Rb) applications. The 778.105 nm Series DBR devices are Spectroscopy Certified; guaranteed to hit the Rb two-photon transition ¬®¬± 10 ¬®?C from room temperature.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 40-120 mW
Package Add-on description:
C-Mount features our chip on submount (CoS) directly attached to a copper-tungsten (CuW) heatsink for easy integration into macro-packaging efforts. Perfect for OEM integration where ambient environments are acceptable.
Ask Price
852.347 nm single-frequency DBR High Power Chip Architecture ($3750) with output power of 5000 mW, in an IsoBragg Package ( $1800), for a total unit cost of $5550
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
Contact Sales For Lead Time