wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power RFQ
Power:
40 mW
- 80 mW
Mounting:
Mode Hop Free (MHF) $700
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 737 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 737 nm Series DBR devices are used in NV-center research and optical-pumped magnetometry applications.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 40-80 mW
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 2.8x3.8x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering. The Mode-Hop Free (MHF) add-on is ideal for applications where tunability is critical, removing the mode-hops for consistent power and wavelength tuning by controlling current.
Ask Price
737 nm single-frequency DBR High Power Chip Architecture (RFQ) with output power of 40-80 mW, Mode Hop Free Mounting ( $700), chip on submount. Base chip architecture price and total unit cost are available upon request.
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!
Shipping Lead time
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