wavelength:
Type:
DBR Laser Diode
Chip Architecture:
High Power $3,750
Power:
80 mW
- 240 mW
Mounting:
Mode Hop Free (MHF) +$700
Packaging:
Chip on Submount (CoS)
PRODUCT DESCRIPTION
The 935 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 935 nm Series DBR devices are used in atomic spectroscopy for ytterbium-based (Yb) applications.
Chip Architecture Description
This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the High Power laser diode architecture, a product designed to push the limits of power, offering maximized output power while retaining spectral stability. Power output is between 80-240 mW
Package Add-on description:
Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 2.8x3.8x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering. The Mode-Hop Free (MHF) add-on is ideal for applications where tunability is critical, removing the mode-hops for consistent power and wavelength tuning by controlling current.
PRICE: $4,450.00
935 nm single-frequency DBR High Power Chip Architecture ($3750) with output power of 80-240 mW, Mode Hop Free Mounting (+$700), chip on submount, for a total unit cost of $4450
HOW TO ORDER
Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!