Photodigm DBR Laser Diodes ranging 730-1100 nm

(972) 235-7584




DBR Laser Diode

Chip Architecture:

Low Power $2,750


40 mW

- 180 mW


Direct-Edge Coupling (DEC) +$100


Chip on Submount (CoS)


The 1036 nm DBR Series of high-performance edge-emitting laser diodes are based on Photodigm’s advanced monolithic single-frequency Gallium Arsenide (GaAs) based laser technology. It provides a single spatial mode beam and has passivated facets for reliability. The 1036 nm Series DBR devices are used in frequency doubling applications as a low-noise optical pump source.

Chip Architecture Description

This laser diode is based on Photodigm's proprietary Distributed Bragg Reflector (DBR) design. It is augmented by the Low Power laser diode architecture, a product designed for applications where low threshold currents are desired and power output isn't application critical. Power output is between 40-180 mW

Package Add-on description:

Chip on submount (CoS) is the most fundamental packaging option offered. The laser diode sits on a 3.8x2.8x0.5 mm^3 metallized submount. They are the perfect platform for designing your own package around and creative engineering.nThis product also features Direct Edge-Coupling (DEC), where the gain chip overhangs slightly by +20 microns for easy butt-coupling to Photonic Integrated Circuits (PICs). DEC has the precision of ± 3 microns positional placement with ± 1° rotational placement.

PRICE: $2,850.00

1036 nm single-frequency DBR Low Power Chip Architecture ($2750) with output power of 40-180 mW, Direct-Edge Coupling (DEC) (+$100), chip on submount, for a total unit cost of $2850


Contact us for your custom quote, special frequency selection, and certification to certain atomic absorption lines. Contact us for product availability, more information on volume discounts, and any questions!

Contact us for: 1036DBRL-DEC-CS